The invention discloses a complementary type resistive random access memory and a production method thereof. The complementary type resistive random access memory sequentially comprises a bottom electrode, an oxygen storage layer, a storage medium layer and a top electrode from bottom up, wherein the titanium dioxide nanometer storage medium layer and the titanium oxynitride oxygen storage layer are prepared by plasma oxidation of a titanium nitride film. Oxygen vacancies are distributed between an upper interface and a lower interface of the nanometer storage medium layer through electric excitation so as to achieve the complementary type resistance changing function. The problem of crosstalk in a cross array of the resistive random access memory is effectively solved. The complementary type resistive random access memory has the characteristics of simple production method, low cost and the like. The production method is used for developing a nanometer nonvolatile resistive random access memory with high storage density and low power consumption.