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发明公开
CN103035562A 制造绝缘体上硅结构的工艺 有权

制造绝缘体上硅结构的工艺
摘要：
本发明涉及一种制造绝缘体上硅结构的工艺，所述工艺包括以下步骤：（a）设置供体衬底（31）和支撑衬底（1），所述衬底中只有一个被所述氧化物层（2）覆盖；（b）在所述供体衬底（31）中形成弱区（32）；（c）等离子体激活所述氧化物层（2）；（d）在部分真空中，将所述供体衬底（31）粘结于所述支撑衬底（1）；（e）在350℃或更低的温度下，实现粘结增强退火，从而造成所述供体衬底（31）沿着所述弱区（32）劈裂；以及（f）在超过900℃的温度下执行热处理-以超过10℃/s的升温速率实现从步骤（e）的温度到步骤（f）的温度的转变。
摘要（英）：

The invention relates to a process for fabricating a silicon-on-insulator structure comprising the following steps: (a) providing a donor substrate (31) and a support substrate (1), only one of said substrates being covered with an oxide layer (2); (b) forming, in the donor substrate (31), a weak zone (32); (c) plasma activating said oxide layer (2); (d) bonding the donor substrate (31) to the support substrate (1) in a partial vacuum; (e) implementing a bond-strengthening anneal at a temperature of 350 DEG C or less causing the donor substrate (31) to cleave along the weak zone (32); and (f) carrying out a heat treatment at a temperature above 900 DEG C - the transition from the temperature of step (e) to that of step (f) being achieved at a ramp rate above 10 DEG C/s.

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