The invention discloses a germanium-silicon heterogenous junction bipolar transistor. An outer base region comprises germanium impurities or carbon impurities and P-type impurities, wherein the germanium impurities or the carbon impurities are injected in an autoregistration mode by using the outer side periphery of an emission region as an autoregistration boundary. The invention further discloses a manufacturing method of the germanium-silicon heterogenous junction bipolar transistor. According to the germanium-silicon heterogenous junction bipolar transistor and the manufacturing method of the germanium-silicon heterogenous junction bipolar transistor, due to the fact that the germanium impurities or the carbon impurities are injected into the outer base region, transverse diffusion of the P-type impurities can be reduced, the width of the outer base region can be reduced, and a maximum oscillation frequency of a device is improved.