Obtaining a semiconductor bonding structure body that has a superior stress alleviation property, and has a heat resistance property at the same time. A bonding structure body in which a semiconductor element (102) and an electrode (103) are bonded via a solder material, wherein a part (212) that allows bonding has a first intermetallic compound layer (207') that has been formed on the electrode side, a second intermetallic compound layer (208') that has been formed on the semiconductor element side, and a third layer (300) that is constituted by a phase (210) containing Sn and a sticks-like intermetallic compound part (209'), which is sandwiched between the two layers of the first intermetallic compound layer (207') and the second intermetallic compound layer (208'), and the sticks-like intermetallic compound part (209') is interlayer-bonded to both of the first intermetallic compound layer (207') and the second intermetallic compound layer (208').