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发明公开
CN103184429A 成膜方法 有权

成膜方法
摘要：
本发明提供一种成膜方法，其是在成膜装置中进行的成膜方法，该成膜装置包括用于载置多个晶圆的旋转台；在旋转台的上方划分的第一反应气体供给区域、第二反应气体供给区域；以及用于分离第一反应气体供给区域和第二反应气体供给区域的分离区域，该成膜方法包括如下步骤：不向第二反应气体供给区域供给反应气体，向第一反应气体供给区域供给第一反应气体，通过旋转台的旋转使晶圆暴露于第一反应气体，从而使该气体吸附于晶圆表面；接着该步骤，不向第一反应气体供给区域供给反应气体，向第二反应气体供给区域供给第二反应气体，通过旋转台的旋转使晶圆暴露于第二反应气体，从而使吸附于晶圆表面的第一反应气体与第二反应气体反应。
摘要（英）：

A film deposition method of forming a film in a film deposition apparatus including, a turntable for carrying wafers, a first reaction gas supplying portion on the surface of the turntable, a second reaction gas supplying portion on the surface of the turntable, and a separation portion for separating the first reaction gas supplying portion from the second reaction gas supplying portion, comprises an adsorption step of adsorbing the first reaction gas onto the surface of the wafer by supplying the first reaction gas from the first gas supplying portion without supplying a reaction gas from the second gas supplying portion, and exposing the wafer in the first reaction gas by rotating of the turntable; and a reaction step of having the first reaction gas adsorbed onto the surface of the wafer react with the second reaction gas by supplying the second reaction gas from the second gas supplying portion without supplying a reaction gas from the first gas supplying portion and exposing the wafer in the second reaction gas by rotating of the turntable.

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