The invention discloses a method for manufacturing a semiconductor technology-post integrated circuit and capacitance-type micro silicon microphone monolithic integration based on an SOI (Silicon-On-Insulator) lining and a chip. The method comprises the steps as follows: structures such as a back electrode plate, a sound sensitive membrane, a sacrificial layer and the like are processed on a substrate processed by a standard semiconductor technology to form a micro silicon microphone by adopting the low-temperature technology so as to achieve integration of the micro silicon microphone and the existing circuit of the substrate, as a result, an integrated circuit element is integrated with the micro silicon microphone to form a monolithic integrated chip with high sensitivity.