The invention belongs to the technical field of crystal structure measurement through measuring back scattering, and relates to a method for measuring the orientation differences of orientation silicon steel crystal particles by utilizing an EBSD (Electron Back-Scattered Diffraction) technique. The method provided by the invention comprises the following steps of: measuring the euler angle of each crystal particle in a taken test sample by adopting the principle of detecting the crystal particle orientation by adopting the EBSD, and calculating the orientation differences of adjacent crystal particles and the orientation differences between the crystal particles and a standard goss texture, thereby obtaining the corresponding relationships between the magnetic induction intensity and the orientation differences. The method has the advantages of, rapid measurement speed, large measurement region, intuitive and understandable expression, typical obtained result and the like, and is simple to operate.