The invention relates to a method for designing an integrated circuit under the consideration of device aging, and discloses a method for designing an integrated circuit (IC). The method comprises the following steps of: providing a standard unit library and a device activity file for saving an electric device activity in a standard unit serving as a function of an electric activity at a pin of the standard unit, and considering hot carrier injection, negative bias temperature instability and grid oxide breakdown to simulate the aging development of the IC; providing a standard unit development file for saving the electric characteristic aging data of the standard unit; providing an example activity file for saving a simulation electric activity at the pin position of each example of a unit in the IC, wherein the example activity file and the device activity file are used for analyzing the result aging development of device activities and the device; generating data of the result aging development of the IC; and modifying the IC design to consider the aging development.