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发明公开
CN103367165A 薄膜晶体管及其制作方法、阵列基板及显示器 无效 - 驳回

薄膜晶体管及其制作方法、阵列基板及显示器
摘要：
本发明公开了一种薄膜晶体管及其制作方法、阵列基板及显示器，用以避免半导体有源层受到光照影响而导致薄膜晶体管产生漏电流的问题。所述薄膜晶体管包括源极和漏极、半导体有源层、栅极绝缘层和栅极，该薄膜晶体管还包括：位于源极与漏极之间的遮光板，所述遮光板将源极与漏极阻断，并且该遮光板位于半导体有源层的入射光侧，用于阻挡入射光对半导体有源层的照射。
摘要（英）：

The invention discloses a thin film transistor, a manufacturing method thereof, an array substrate and a display, and aims at solving the problem that the thin film transistor generates leakage current due to a reason that the semiconductor active layer is influenced by illumination. The thin film transistor comprises a source, a drain, a semiconductor active layer, a grid insulating layer and a grid. The thin film transistor further comprises a visor is arranged between the source and the drain. The visor obstructs the source from the drain. Besides, the visor is arranged on the side of the incident light of the semiconductor active layer and is used for obstructing the incident light from irradiating the semiconductor active layer.

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