The invention relates to an electrostatic discharge protection structure. The electrostatic discharge protection structure comprises a substrate, a well region, a substrate contact region, a well region contact region, a substrate contra-doping region, a well region contra-doping region, a communication region, a first isolation region, a second isolation region, an oxidation layer and a field plate structure. The substrate has a first conduction type, and the well region has a second conduction type. The substrate contact region is arranged inside the substrate and has the first conduction type, and the well region contact region is arranged inside the well region and has the second conduction type. The substrate contra-doping region is placed between the substrate contact region and the well region contact region and has the second conduction type. The well region contra-doping region is placed between the substrate contact region and the well region contact region and has the first conduction type. The communication region is arranged on the transverse junction portion of the substrate and the well region. The first isolation region is placed between the substrate contra-doping region and the communication region, and the second isolation region is placed between the well region contra-doping region and the communication region. One end of the oxidation layer is arranged on the first isolation region, and the other end of the oxidation layer is arranged on the substrate. The field plate structure is arranged on the oxidation layer. The invention further relates to a manufacturing method of the electrostatic discharge protection structure. According to the electrostatic discharge protection structure and the manufacturing method thereof, threshold voltages can be adjusted by the way that the width and the position of the field plate structure are regulated.