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发明公开
CN103489762A 形成多晶硅薄膜的方法 无效 - 撤回

形成多晶硅薄膜的方法
摘要：
本发明公开了一种形成多晶硅薄膜的方法包括下列步骤。首先，提供一基底。然后，进行一加热处理。接着，进行一硅薄膜沉积工艺，用以直接在基底的上表面上形成一多晶硅薄膜。借此，具有缩短工艺时间、降低成本以及提高整体生产效率的优点。
摘要（英）：

A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process. The method has advantages of shortening processing time, reducing cot and improving integral production efficiency.

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