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发明公开
CN103500781A 一种高效率的AlGaInP发光二极管外延片及其制备方法 失效 - 权利终止

一种高效率的AlGaInP发光二极管外延片及其制备方法
摘要：
本发明涉及AlGaInP发光二极管，具体是一种高效率的AlGaInP发光二极管外延片及其制备方法。本发明解决了现有AlGaInP发光二极管的外延片工艺复杂、成本高、以及出光效率较低的问题。一种高效率的AlGaInP发光二极管外延片，包括n-GaAs衬底、n-GaAs缓冲层、n-AlxGa1-xAs渐变层、复合式DBR、n-InAlP限制层、有源层、p-InAlP限制层、P型超晶格层、p-GaP窗口层；其中，n-GaAs缓冲层生长于n-GaAs衬底的上表面；n-AlxGa1-xAs渐变层生长于n-GaAs缓冲层的上表面。本发明适用于AlGaInP发光二极管的制造。
摘要（英）：

The invention relates to an AlGaInP light emitting diode, in particular to an efficient AlGaInP light emitting diode epitaxial wafer and a preparation method thereof. The problems that the existing AlGaInP light emitting diode epitaxial wafer is complex in process, high in cost and lower in luminous efficiency are solved. The efficient AlGaInP light emitting diode epitaxial wafer comprises an n-GaAs substrate, an n-GaAs buffer layer, an n-AlxGa1-xAs gradient layer, a combined type DBR, an n-InAlP confinement layer, an active layer, a p-InAlP confinement layer, a P type superlattice layer and a p-GaP window layer, wherein the n-GaAs buffer layer is grown on the upper surface of the n-GaAs substrate; the n-AlxGa1-xAs gradient layer is grown on the upper surface of the n-GaAs buffer layer. The epitaxial wafer and the preparation method are applicable to manufacturing the AlGaInP light emitting diode.

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