To provide a variable resistance element wherein a forming process is unnecessary and it is possible to reduce the power consumption of the element and to miniaturize same. To also provide a method for producing said variable resistance element. This variable resistance element (1) is provided with a bottom electrode layer (3), a top electrode layer (5), and an oxide semiconductor layer (4). The oxide semiconductor layer (4) has a first metal oxide layer (41) and a second metal oxide layer (42). The first metal oxide layer (41) is formed between the bottom electrode layer (3) and the top electrode layer (5) and comes into ohmic contact with the bottom electrode layer (3). The second metal oxide layer (42) is formed between the first metal oxide layer (41) and the top electrode layer (5) and comes into ohmic contact with the top electrode layer (5).