The invention provides a manufacture method of a semiconductor structure. The method comprises the following steps: providing a substrate, forming a gate stack on the substrate and forming a source/drain region in the substrate; etching the source/drain region to form grooves; forming a contact layer on the surface of the etched source/drain region; forming stress generation material layers in the grooves; and depositing an interlayer dielectric layer and forming a contact plug which is contacted with stress generation materials. Correspondingly, the invention also provides the semiconductor structure. Through etching the source/drain region, the grooves are formed so as to increase the exposed areas of the source/drain region; then the contact layer is formed on the surface of the source/drain region; and the grooves are filled with the stress generation materials; and therefore, contact resistance between the source/drain region and the contact layer is effectively reduced, and meanwhile, the grooves are introduced with stress; migration rate of current carriers in the grooves is improved, and the performance of the semiconductor structure is improved.