Provided are an SiC single crystal having one or more orientation regions where linearity of basal plane dislocations is high, and the basal plane dislocations are oriented in the three crystallographically equivalent (11-20); directions, and an SiC wafer and a semiconductor device manufactured from such an SiC single crystal. This SiC single crystal can be manufactured by using a seed crystal that has a small offset angle on the {0001} plane highest portion side and a large offset angle on the offset direction downstream side, and growing a new crystal on the seed crystal.