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发明公开
CN103839788A SiGeSn层及其形成方法 无效 - 驳回 复审申请

SiGeSn层及其形成方法
摘要：
本发明提出一种SiGeSn层及其形成方法。该方法包括以下步骤：提供顶部具有SiGe层的衬底；向SiGe层表层注入含有Sn元素的原子、分子、离子或等离子体，以形成SiGeSn层。该方法能够形成厚度较薄、质量较好的SiGeSn层，具有简单易行、成本低的优点。
摘要（英）：

The invention provides a SiGeSn layer and a forming method of the SiGeSn layer. The method includes the following steps that a substrate is provided, wherein the top of the substrate is provided with a SiGe layer; atoms or molecules or ions or plasma containing the Sn element is injected into the surface layer of the SiGe layer to form the SiGeSn layer. According to the method, the SiGeSn layer with the small thickness and the good quality can be formed, and the SiGeSn layer has the advantages of being simple, practicable and low in cost.

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