The invention discloses a bipolar power transistor substrate and a manufacturing method of the bipolar power transistor substrate, and relates to the technical field of manufacturing methods of transistors. The substrate comprises a wafer. A titanium metallic layer, a nickel metallic layer and a gold metallic layer are sequentially arranged on the lower surface of the wafer from top to bottom. By the adoption of the method, the adhesive property of metal on the back of a bipolar power transistor and the back of the wafer is improved, it is guaranteed that a transistor core and a transistor base are firmly and reliably sintered together, it is avoided that holes are prone to forming in the sintering position of the back of a high-power chip in the sintering process, and then the passive situation that the reliability of the transistor is affected by hot spots of the power transistor, and the bipolar power transistor substrate is mainly suitable for a gold metallization system, in other words, the sintering position of the transistor base is plated, and metal on the back of the chip also belongs to a system in which gold is main sintering participating metal.