The invention relates to the semiconductor technology, in particular to a terminal structure for improving the avalanche tolerance of a super junction power device. A terminal breakdown region is arranged in a device terminal, avalanche breakdown points are limited in the terminal breakdown region, the parasitic BJT conductivity problem of cellular breakdown is avoided, the problem of local temperature rising caused by the too long path of an avalanche current during common terminal breakdown is avoided, and therefore the avalanche tolerance and reliability of the super junction power device can be improved. The terminal structure has the advantages that the path of the avalanche current is effectively reduced when the device avalanche breakdown points are in the terminal, the anti-UIS lose efficacy capacity of the device is improved on the premise of not affecting the device breakdown voltage, and the reliability of the device is improved. The terminal structure is especially suitable for the super junction power device.