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发明授权
CN104078331B 单晶4H-SiC衬底及其制造方法 有权

单晶4H-SiC衬底及其制造方法
摘要：
本发明可得到能够减少晶体缺陷的单晶4H-SiC衬底及其制造方法。准备具有平坦性的4H-SiC体材料单晶衬底（1）。在4H-SiC体材料单晶衬底（1）上外延生长具有凹部（2）的单晶4H-SiC层3）。单晶4H-SiC层（3）的膜厚为X[μm]时，凹部2）的直径Y[μm]是0.2×X[μm]以上、2×X[μm]以下，且凹部（2）的深度Z[nm]是0.95×X[μm]+0.5[nm]以上、10×X[μm]以下。
摘要（英）：

A method for manufacturing a single-crystal 4H-SiC substrate includes: preparing a flat 4H-SiC bulk single-crystal substrate; and epitaxially growing a first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate, wherein the first single-crystal 4H-SiC layer has a thickness of X (μm), the recesses have a diameter Y (μm) no smaller than 0.2*X (μm) and no larger than 2*X (μm), and a depth of Z (nm) no smaller than (0.95*X (μm)+0.5 (nm)) and no larger than 10*X (μm).

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