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发明授权
CN104109846B 半导体器件的制造方法及衬底处理装置 有权 转让

半导体器件的制造方法及衬底处理装置
摘要：
本发明涉及半导体器件的制造方法及衬底处理装置。本发明的课题在于形成膜厚均匀性优异的薄膜。通过如下手段解决本发明的课题：在对处于小于大气压的压力下的处理室内的加热后的衬底供给含氧气体和含氢气体而对衬底的表面进行前处理后，通过进行规定次数包含以下工序的循环而在进行了前处理的衬底上形成薄膜，所述循环包含对处理室内的衬底供给原料气体的工序、和对处理室内的衬底供给反应气体的工序。
摘要（英）：

A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber.

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