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发明授权
CN104115258B 外延基板、半导体装置及半导体装置的制造方法 有权

外延基板、半导体装置及半导体装置的制造方法
摘要：
本发明具备硅系基板(11)与外延生长层(12)，其中外延生长层(12)具有晶格常数和热膨胀系数彼此相异的第1氮化物半导体层和第2氮化物半导体层交互积层而成的结构，并以在外缘部中的膜厚逐渐变薄的方式被配置在硅系基板(11)上。由此，本发明提供一种抑制外缘部发生裂痕的外延基板、半导体装置及这种半导体装置的制造方法。
摘要（英）：

The present invention includes: a silicon-based substrate; and an epitaxial growth layer that has a configuration in which first and second nitride semiconductor layers having different lattice constants and thermal expansion coefficients are alternately laminated, and is arranged on the silicon-based substrate so that a film thickness thereof is gradually reduced at an outer edge portion. As a result, there are provided an epitaxial substrate and a semiconductor device in which generation of cracks at the outer edge portion is suppressed, and a method for manufacturing the semiconductor device.

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