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发明授权
CN104299880B 等离子体处理装置及等离子体处理装置的运行方法 有权

等离子体处理装置及等离子体处理装置的运行方法
摘要：
本发明提供提高了处理的成品率的等离子体处理装置或等离子体处理装置的运行方法。该等离子体处理装置包括检测来自在处理室内形成的等离子体的发光强度的变化的检测器，使用来自该检测器的输出来调节形成上述等离子体或处理配置于该处理室内的晶片的条件，上述检测器检测上述处理中的任意时刻以前的多个时刻下的上述发光强度的信号，从该检测出的信号中去除上述发光强度的长周期的时间变化的分量，从而检测上述发光强度的短时间变化的分量，并且上述检测器基于检测出的上述发光强度的短时间变化来调节形成上述等离子体或处理配置于该处理室内的晶片的条件。
摘要（英）：

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

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