The invention discloses an aluminum gallium nitrogen-based solar blind ultraviolet detector and a production method thereof. The aluminum gallium nitrogen-based solar blind ultraviolet detector comprises a sapphire substrate, an A1N nucleating layer, an A1Ga<1-x1>N buffer layer, an n-type A1Ga<1-x2>N layer, an undoped i-type A1Ga<1-x3>N absorbing layer, an n-type A1InGa<1-x4-y1>N/A1InGa<1-x5-y2>N superlattice separating layer, an undoped i-type A1Ga<1-x6>N multiplication layer, a p-type A1Ga<1-x7>N layer and a p-type GaN layer which are sequentially arranged from the bottom up. An n-type ohmic electrode leads from the n type A1Ga<1-x2>N layer, and a p type ohmic electrode leads from the p type GaN layer. According to the arrangement, the absorbing layer and the multiplication layer are separated by the multi-cycle n type A1InGa<1-x4-y1>N/A1InGa<1-x5-y2>N superlattice separating layer, the electric field of the multiplication layer is increased, thus allowing uniform avalanche multiplication to occur under the high electric field, and avalanche multiplication factors of the solar blind ultraviolet detector are increased.