The invention provides a semiconductor device which is a trench gate type semiconductor device. The production cost is reduced and the feedback capacitance is reduced as well. A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses.