The invention provides a novel thin film deposition aluminum precursor. The novel thin film deposition aluminum precursor has a molecular structure expressed by a structural formula (I) as shown in the specification, wherein R1, R2, R3, R4 and R5 represent hydrogen atom, C1-C6 alkyls, C2-C5 alkenyls, C3-C10 naphthenic bases, C6-C10 aryls or -Si(R0)3, and halogen substituent groups of the groups, wherein R0 is one of C1-C6 alkyls or the halogen substituent groups thereof; and R1, R2, R3, R4 and R5 are the same or different. According to the novel thin film deposition aluminum precursor, the thin film deposition precursor good in thermal stability and not easy to decompose is developed, and is convenient to store and transport and good in high-temperature volatility; aluminum-containing thin films such as an aluminum-containing metal thin film, an aluminum-containing oxide thin film, an aluminum-containing nitride thin film and an aluminum-containing alloy thin film can be prepared by use of a CVD/ALD process, and the film-forming property is excellent.