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发明公开
CN104561918A 一种MnFeCu三元反铁磁形状记忆合金薄膜的制备方法 有权

一种MnFeCu三元反铁磁形状记忆合金薄膜的制备方法
摘要：
本发明提供一种MnFeCu三元反铁磁形状记忆合金薄膜的制备方法。本发明的MnFeCu三元反铁磁形状记忆合金薄膜的制备方法，包括以下步骤：a.将MnFeCu三元合金作为靶材安装在磁控溅射设备的靶位上；b.将衬底置于真空室样品台上，抽真空至真空度为1.0×10-4Pa-5.0×10-4Pa，使衬底的温度为室温～700K，在溅射功率为60W～140W，靶材与衬底的间距为40mm-80mm的条件下溅射沉积MnFeCu薄膜，溅射完成后，在高真空下冷却至室温，即可制得MnFeCu三元反铁磁形状记忆合金薄膜。与现有技术相比，本发明的MnFeCu三元反铁磁形状记忆合金薄膜的制备方法简单，原材料成本低，使得MnFeCu三元反铁磁形状记忆合金薄膜的生产成本低。
摘要（英）：

The invention provides a preparation method for a MnFeCu ternary antiferromagnetic shape memory alloy thin film. The preparation method comprises the following steps: a, mounting a MnFeCu ternary alloy on a target position of magnetron sputtering equipment as a target; b, placing a substrate on a sample stage of a vacuum chamber, performing vacuumizing until the vacuum degree is 1.0*10<-4> to 5.0*10<-4>Pa to make the temperature of the substrate between room temperature and 700K, sputtering and depositing a MnFeCu thin film under the conditions of sputtering power of 60 to 140W and the distance of 40 to 80mm between the target and the substrate, and after sputtering, cooling the MnFeCu thin film to room temperature under a high-vacuum condition to obtain the MnFeCu ternary antiferromagnetic shape memory alloy thin film. Compared with the prior art, the preparation method for the MnFeCu ternary antiferromagnetic shape memory alloy thin film is simple; the raw material cost is low, so that the production cost of the MnFeCu ternary antiferromagnetic shape memory alloy thin film is low.

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