The invention discloses a low-profile microwave absorber with a broadband absorbing characteristic, in particular to a broadband microwave absorber based on the capacitive surface. In view of impedance analysis, the low-frequency sensitive impedance characteristic of a medium substrate is utilized to obtain the impedance characteristic of the capacitive surface matched with the medium substrate. For the medium substrate fixed in thickness, working frequency band of the absorber is reduced by the capacitive surface, and electric thickness of the absorber is reduced. Further, multiple resonance is realized by a metal strip array loaded with lumped resistance, so that the low-profile microwave absorber with the wide frequency band absorbing characteristic is obtained. The medium layer of the absorber adopts a two-layer structure, the upper layer is a common medium substrate, and the lower layer is common polystyrene foam. Though with the bilayer medium materials, a single-layer metal patching circuit is adopted only, and the low-profile microwave absorber is simple in structure and easy to machine. In addition, cost and weight are low, and massive production can be realized.