An object is to provide a method of producing a semiconductor epitaxial wafer having higher gettering capability and a reduced haze level of the surface of a semiconductor epitaxial layer. The method of producing a semiconductor epitaxial wafer, according to the present invention includes: a first step of irradiating a semiconductor wafer 10 with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion 10A of the semiconductor wafer; a second step of performing heat treatment for crystallinity recovery on the semiconductor wafer 10 after the first step such that the haze level of the semiconductor wafer surface portion 10A is 0.20 ppm or less; and a third step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer after the second step.