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发明公开
CN104885201A 半导体器件的制造方法、衬底处理装置以及记录介质 有权 转让

半导体器件的制造方法、衬底处理装置以及记录介质
摘要：
提供一种得到良好的膜质的衬底处理装置。进行：原料气体供给工序，在将收容于处理室的衬底维持在第一温度的同时，向所述处理室供给原料气体；第一除去工序，向所述处理室供给以比所述第一温度高的第二温度加热的非活性气体，除去残留在所述处理室中的所述原料气体；反应气体供给工序，向所述处理室供给反应气体；以及第二除去工序，向所述处理室供给非活性气体，除去残留在所述处理室中的所述反应气体。
摘要（英）：

[Problem] The present invention addresses the problem of providing a substrate processing apparatus for obtaining excellent film qualities. [Solution] This substrate processing apparatus performs: a starting material gas supply step for supplying a starting material gas to a processing chamber, while maintaining a substrate contained in the processing chamber at a first temperature; a first removing step for removing the starting material gas left in the processing chamber, said starting material gas being removed by supplying the processing chamber with an inert gas heated to a second temperature higher than the first temperature; a reaction gas supply step for supplying a reaction gas to the processing chamber; and a second removing step for removing, by means of supplying the processing chamber with the inert gas, the reaction gas left in the processing chamber.

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