The invention relates to the technical field of semiconductor devices and specifically relates to an insulated gate bipolar transistor and a manufacture method thereof. According to the technical scheme provided by the invention, a device is enabled to become a transmitting electrode embedded channel-type IGBT through an N-type heavy doping layer 9 arranged in a P-body region. Namely, a Darlington tube is introduced. As indicated in graph 5, a branch circuit with J1 is closed firstly during a switching on process. Electrons are injected to an N-drift region, which promotes an anode P region to inject a hole to the drift region. The hole reaches a cathode electrode through an expitaxy P-body region. With the increase of J2 current, voltage drop between two ends of Rp increases, so that the Darlington tube is switched on. In a conduction state, conduction resistance is decreased due to the high hole density of PN junctions of an N-type CS layer 5 and the expitaxy P-body region. Electron holes of the N-drift region 4 can be extracted easily in a switching off process, so that switching off time and switching off loss can be reduced. The invention especially provides the insulated gate bipolar transistor and the manufacture method thereof.