The invention provides a method for producing silicon carbide in which, when a carbon materials heater is provided in a silicon crystal production apparatus and silicon crystals are produced from a silicon melt housed in a container heated by the carbon materials heater in a non-oxidizing atmosphere, silicon carbide is secondarily formed on the surface of the carbon materials heater and silicon carbide is produced by recovering this secondary silicon carbide. A method is thereby provided that makes it possible to produce silicon carbide at low cost and with little energy.