The invention relates to a single-side grinding method for a germanium single crystal wafer. The single-side grinding method for the germanium single crystal wafer comprises the steps of wax sticking, thinning, dissociation and wax removal. A double-decked clad sheet of slide glass and germanium single crystal wafer adhered to the slide glass is obtained by sticking the wax, the diameter and the Morse strength of the slide glass are greater than the diameter and the Morse strength of the germanium single crystal wafer; the double-decked clad sheet with certain thickness is obtained by thinning through a grinding method; the dissociation of the slide glass and the germanium single crystal wafer is carried out by heating; and the wax removal of the germanium single crystal grinding sheet is carried out to obtain the germanium single crystal wafer with a required thickness. The single-side grinding method for the germanium single crystal wafer has the beneficial effects that the surface quality of the germanium single crystal wafer is good; the removal quantity of grinding is measured and controlled in real time; the generation of edge breakage and cracks is reduced, and production cost is reduced.