The invention discloses a chip-scale package light emitting diode which comprises a positive package chip, rectangular groove-shaped fluorescent powder, a rectangular positive electrode and an annular negative electrode, wherein the positive package chip sequentially comprises a transparent metal connection layer, a transparent electrode indium-tin oxide (ITO) layer, a p-type layer generating electrons, a quantum well layer combined with electrons and holes, an n-type layer generating electrons, a lattice matching buffer layer and a substrate layer, wherein the transparent metal connection layer is connected with the rectangular positive electrode via metal posts, and the p-type layer generating the electrons is arranged above the substrate layer. Through the design disclosed by the invention, chip area is saved, the response rate of the light emitting diode is accelerated, and the light emitting area of the diode is also expanded.