Provided is a light emitting device, light radiated from which has high intensity. A blue LED chip (20) that has a peak of emitted light within the range of from 360 nm to 500 nm (inclusive) is bonded to an electrode substrate (11) by means of an anisotropically conductive adhesive (12). A light reflecting layer formed of a silver alloy is formed on the surface of each conductive particle (1) that is contained in the anisotropically conductive adhesive (12), and the conductive particles (1) have high reflectance with respect to blue light. The light reflecting layer is formed by sputtering a sputtering target that contains from 0.1% by weight to 3.0% by weight (inclusive) of Bi and from 0.1% by weight to 2.0% by weight (inclusive) of Nd if the total of Ag, Bi and Nd is taken as 100% by weight, and the light reflecting layer has high resistance against migration.