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发明公开
CN105229777A 供液装置以及基板处理装置 有权

供液装置以及基板处理装置
摘要：
提供一种将处理液供给到处理装置并回收而再供给的供液装置，上述供液装置具备：多个供给罐，收纳上述处理液并且具有排气通路和溢流线路，能够切换为供给上述处理液的供给模式和在收纳上述处理液的状态下待命的待命模式中的某一种；供给机构，将上述处理液从这些多个供给罐中的供给模式的供给罐向上述处理装置供给；回收机构，将上述处理装置中剩余的上述处理液回收并返回供给模式的供给罐；以及开闭机构，分别设置于上述多个供给罐，对上述排气通路和上述溢流线路进行封堵。由此，能够延长被收纳于供给罐并处于待命状态的处理液的寿命。
摘要（英）：

Provided is a liquid supply device for supplying a processing liquid to a processing device, and recovering and resupplying the processing liquid, wherein the liquid supply device is provided with: a plurality of supply tanks for containing the processing liquid, the supply tanks having an exhaust path and an overflow line and being capable of switching between supply mode for supplying the processing liquid and standby mode for standing by while containing the processing liquid; a supply mechanism for supplying the processing liquid to the processing device from the supply tank, from among the plurality of supply tanks, that is in supply mode; a recovery mechanism for recovering the surplus processing liquid in the processing device and returning the recovered processing liquid to the supply tank that is in supply mode; and opening/closing mechanisms provided to each of the supply tanks, each of the opening/closing mechanisms blocking the exhaust path and the overflow line. It is thereby possible to extend the lifespan of the processing liquid contained in the supply tanks in standby state.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306 ......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
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