利索-全球专利检索

  1. Login
  2. Sign Up
Invention Publication
CN105247693A LED用图案晶片、LED用外延片以及LED用外延片的制造方法 有权 转让

  • Patent Title: LED用图案晶片、LED用外延片以及LED用外延片的制造方法
  • Patent Title (English): LED pattern wafer, LED epitaxial wafer, and production method for LED epitaxial wafer
  • Application No.: CN201480031293.8
    Application Date: 2014-05-28
  • Publication No.: CN105247693A
    Publication Date: 2016-01-13
  • Inventor: 古池润
  • Applicant: 旭化成电子材料株式会社
  • Applicant Address: 日本国东京都千代田区神田神保町一丁目105番地
  • Assignee: 旭化成电子材料株式会社
  • Current Assignee: 旭化成株式会社
  • Current Assignee Address: 日本国东京都千代田区神田神保町一丁目105番地
  • Agency: 上海市华诚律师事务所
  • Agent 徐乐乐
  • Priority: 2013-116025 2013.05.31 JP; 2013-116024 2013.05.31 JP
  • International Application: PCT/JP2014/064153 2014.05.28
  • International Announcement: WO2014/192821 JA 2014.12.04
  • Date entered country: 2015-11-30
  • Main IPC: H01L33/22
  • IPC: H01L33/22 ;  H01L21/205 ;  H01L21/3065
LED用图案晶片、LED用外延片以及LED用外延片的制造方法
Abstract:
LED用图案晶片(10)在主面的至少一部分上具备具有实质上n次对称的排列的凹凸结构A(20)，对于凹凸结构A(20)的至少一部分，相对于其主面内的晶轴方向的、凹凸结构A(20)的排列轴A的旋转位移角θ满足0°＜θ≤(180/n)°，且凹凸结构A(20)的凸部顶部为曲率半径超过0的角部。在凹凸结构A(20)上按以下顺序层叠有第一半导体层(30)、发光半导体层(40)以及第二半导体层(50)，构成LED用外延片(100)。能够提供改善了裂缝以及内量子效率IQE的LED用图案晶片以及LED用外延片。
Abstract(English):

An LED pattern wafer (10) comprising an uneven structure A (20) having a substantially n-times symmetrical array on at least part of the main surface thereof. At least part of the uneven structure A (20) has a rotation shift angle ([Theta]) for an array axis (A) of the uneven structure A (20) relative to the crystal axis direction inside the main surface, that fulfills 0 DEG < [Theta] <= (180/n) DEG . A protrusion peak of the uneven structure A (20) is a corner section having a radius of curvature exceeding 0. Laminated upon the uneven structure A (20) are, in order, a first semiconductor layer (30), a light-emitting semiconductor layer (40), and a second semiconductor layer (50), configuring an LED epitaxial wafer (100). As a result, an LED pattern wafer and an LED epitaxial wafer having improved cracking and internal quantum efficiency (IQE) can be provided.

Public/Granted literature
Patent Agency Ranking
0/0