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发明公开
CN105280761A 半导体发光器件及其制造方法 有权

半导体发光器件及其制造方法
摘要：
本发明提供了一种用于制造半导体发光器件的方法，该方法可包括步骤：形成具有暴露出基本层的一些部分的多个开口的掩模层和模型层；形成多个第一导电类型的半导体芯，每个第一导电类型的半导体芯包括从基本层延伸穿过每个开口的主体部分和设置在主体部分上并具有圆锥形状的末端部分；以及在所述多个第一导电类型的半导体芯中的每一个上形成有源层和第二导电类型的半导体层。形成所述多个第一导电类型的半导体芯的步骤可包括步骤：形成第一区域，以使得末端部分的顶点位于主体部分的中心竖直轴线上；去除模型层；以及在第一区域上形成额外生长区域，以使得主体部分具有六棱柱形状。
摘要（英）：

A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

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