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CN105575770B 带碳化硅膜基板及其制造方法、以及半导体装置 有权

带碳化硅膜基板及其制造方法、以及半导体装置
Abstract:
本发明提供带碳化硅膜基板及其制造方法、以及半导体装置。带碳化硅膜基板层叠在Si基板上、并具备3C‑SiC膜，该制造方法能制造该带碳化硅膜基板，半导体装置具备带碳化硅膜基板。本发明的带碳化硅膜基板具有Si基板、和层叠于Si基板上的SiC膜及掩膜，SiC膜具有设于Si基板上侧的第一SiC膜、和设于第一SiC膜上侧的第二SiC膜，掩膜具有设于Si基板上的、具有开口部(第一开口部)的第一掩膜、和设于第一SiC膜上的、具备开口部(第二开口部)的第二掩膜。开口部的宽度W1[μm]和第一掩膜的厚度T1[μm]满足T1
Abstract(English):

A substrate with a silicon carbide film includes a Si substrate, and a SiC film and a mask stacked on the Si substrate. The SiC film has a first SiC film provided on the upper side of the Si substrate and a second SiC film provided on the upper side of the first SiC film. The mask has a first mask provided on the Si substrate and including an opening (first opening) and a second mask provided on the first SiC film and including an opening (second opening). The width W1 (μm) of the first opening and the thickness T1 (μm) of the first mask satisfy the following relationship: T1

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