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发明授权
CN105590849B 一种解决HDP PSG制程厚度均一性持续跳高的方法 有权

一种解决HDP PSG制程厚度均一性持续跳高的方法
摘要：
本发明公开了一种解决HDP PSG制程厚度均一性持续跳高的方法，通过优化腔体清洁中隔离片与电子吸附装置表面的相对位置，在整个腔体清洁过程中使隔离片覆盖在电子吸附装置表面，防止了副产物在电子吸附装置边缘表面微孔吸附过程的发生，同时，还可配合氧气等离子对电子吸附装置表面进行更彻底的处理，可有效抑制整个电子吸附装置保养周期内晶圆厚度均一性不断变差的趋势，使得厚度均一性得到大幅改善，从而提高了产品的良率与稳定性、可靠性。
摘要（英）：

The invention discloses a method of solving continued jumping of thickness uniformity during HDP PSG processing. A relative position between an isolation sheet and a surface of an electronic adsorption device can be optimized during cleaning of a cavity, and the isolation sheet can be disposed on the surface of the electronic adsorption device in a covered manner during the cleaning of the whole cavity, and therefore the generation of the by-products can be prevented during the micropore adsorption process of the edge surface of the electronic adsorption device. By adopting the cooperation with the oxygen plasma, the surface of the electronic adsorption device can be processed thoroughly, and then the trend of continued weakening of the wafer thickness uniformity of the whole electronic adsorption device in the maintenance period can be effectively inhibited, and therefore the thickness uniformity can be improved greatly, and the yield, the stability, and the reliability of the products can be improved.

公开/授权文献
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314 ......无机层（H01L21/3105，H01L21/32优先）
H01L21/316 .......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层
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