The invention relates to a preparation process of the grating of a distributed Bragg reflector semiconductor laser (DBRLD) and belongs to the semiconductor optoelectronic device field. The output power of a conventional semiconductor laser is susceptible to the influence of ambient temperature; a distributed feedback Bragg semiconductor laser (DFB-LD) needs secondary epitaxial growth, compared with a DBR-LD, the technological process of the DFB-LD is complex; and the application of DFB-LDs in replacing 1064nm solid-state lasers and being adopted as communication seed sources will be affected. According to the preparation process of the grating of the distributed Bragg reflector semiconductor laser, a first-order Bragg grating is manufactured beside the active region of the P surface of a traditional semiconductor laser epitaxial wafer through processing techniques such as holographic lithography and dry etching. With the preparation process adopted, problems such as the problem of the susceptibility of the output power of the DFB-LD to the influence of ambient temperature caused by a situation that the DFB-LD requires secondary epitaxial growth can be effectively solved. The preparation process is of great significance for the development of the distributed Bragg reflector semiconductor laser.