The invention discloses an inductive coupling type plasma processing apparatus. The apparatus comprises a reaction chamber, wherein an insulation cover plate is arranged at the top of the reaction chamber, and the insulation cover plate is provided with an opening; an insulation sleeve which is vertically arranged on the insulation cover plate and communicates with the reaction chamber through the opening; a first inductive coupling coil which is wound on the insulation sleeve, wherein radio frequency currents are introduced into the first inductive coupling coil so as to excite a process gas introduced into the reaction chamber to plasma in and/or below the insulation sleeve; and a first coiling element arranged in the insulation sleeve, wherein the portion, which is in contact with the plasma, of the first cooling element is provided with a plasma-resistant coating, and a cooling medium circulates in the first cooling element so as to cool the plasma. The inductive coupling type plasma processing apparatus can reduce the temperature of the plasma and prevent damage caused by the plasma to the surface of a substrate.