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CN105765698A 碳化硅半导体装置及碳化硅半导体装置的制造方法 无效 - 驳回

碳化硅半导体装置及碳化硅半导体装置的制造方法
摘要：
在n型SiC基板(1)的背面形成欧姆电极(8)时，通过离子注入在n型外延基板的背面的表面层形成n+型半导体区(7)。在该离子注入中，以30keV以上且150keV以下的范围的加速能量注入n型杂质，以使n+型半导体区(7)的杂质浓度成为1×1019/cm3以上且8×1020/cm3以下，优选成为4×1020/cm3以下，且使n+型半导体区(7)的厚度成为200nm以下的程度。然后，在n+型半导体区(7)的表面依次形成镍层和钛层，并通过热处理对镍层进行硅化而形成由硅化镍构成的欧姆电极(8)。据此，能够抑制背面电极剥离，并能够形成具有良好的特性的背面电极。
摘要（英）：

In order to form an ohmic electrode (8) on a rear surface of an n-type SiC substrate (1), an n+-type semiconductor region (7) is formed on a surface layer of a rear surface of an n-type epitaxial substrate by means of ion implantation. In the ion implantation, an n-type impurity is implanted with an acceleration energy within a range of 30-150 keV such that the impurity concentration of the n+-type semiconductor region (7) is not less than 1*1019/cm3 but not more than 8*1020/cm3, preferably, not more than 4*1020/cm3, and the thickness of the n+-type semiconductor region (7) is approximately equal to or less than 200 nm. Then, a nickel layer and a titanium layer are sequentially formed on a surface of the n+-type semiconductor region (7), the nickel layer is silicified by means of heat treatment, and the ohmic electrode (8) is formed of nickel silicide. Consequently, peeling of the rear surface electrode can be suppressed, and the rear surface electrode having excellent characteristics can be formed.

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