The invention provides a monitoring method of a high-current injection machine table. The monitoring method comprises the following steps of forming an oxide layer on a bare chip; measuring the film thickness of the oxide layer; judging whether the uniformity of the film thickness conforms to predetermined requirement or not; executing a high-current injection process on the bare chip by the high-current injection machine table if the uniformity of the film thickness conforms to the predetermined requirement; carrying out N2 annealing on the bare chip after the completion of the high-current injection process; and measuring a square resistance value of the bare chip.