The present invention is provided with: an interposer (1); a semiconductor element (2) mounted on a first surface of the interposer (1); bumps (3) that are formed on a second surface of the interposer (1); and a chip component (10) mounted on the second surface of the interposer (1). The interposer (1) is a silicon interposer, the semiconductor element (2) is flip-chip mounted on the first surface of the interposer (1), the chip component (10) is a thin film passive element wherein an element is formed on a silicon substrate by means of thin film process, and pads are formed on a single surface, and the pads of the chip component (10) are connected to lands by having a conductive bonding material therebetween, said lands having been formed on the second surface of the interposer (1). With such structure, bonding reliability between the interposer (1) and the chip component (10) in a semiconductor package is ensured, while having a small size.