The invention discloses a gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride. The method is mainly used for improving the quality of gallium nitride material. The method comprises the following growing steps: (1) growing of a boron nitride transition layer; (2) magnetron sputtering of an aluminum nitride transition layer; (3) heat treatment; (4) growing of an aluminum nitride buffer layer; (5) growing of a gallium nitride layer with a low V-SH ratio; and (6) growing of a gallium nitride layer with a high V-SH ratio. A gallium nitride film formed according to the method has the advantages of combining hexagonal boron nitride and magnetron-sputtered aluminum nitride, having high material quality and a large applicable substrate range and being capable of being used for manufacturing high-performance gallium nitride devices.