The invention provides a tungsten bismuth titanate ferroelectric film. A chemical formula of a film material is Bi<4>Ti<3-x>WO<12>, wherein x is smaller than or equal to 0.5 and greater than 0. The preparation method comprises the following process routes: preparation of a precursor solution, preparation of a precursor film and preparation of the ferroelectric film; and the method comprises the following steps: with hydrate bismuth nitrate, tetra-n-butyl titanate and isopropyl alcohol as precursors, a mixed solution of glacial acetic acid and diethanol methyl ether as a solvent, and acetylacetone as a stabilizer, preparing a precursor solution and carrying out high-temperature roasting after coating to prepare a smooth and compact tungsten bismuth titanate film with uniform thickness and good permeability. The method has the advantages that components of the material are easy to control; large-scale production is convenient to achieve; and the film has excellent ferroelectric property and is high in remanent polarization intensity and good anti-fatigue performance. Compared with a rare-earth element-doped tungsten bismuth titanate ferroelectric film, no rare-earth element is added in the preparation process of the film, so that the production cost of the film is reduced; and the tungsten bismuth titanate ferroelectric film has a wide application prospect in the field of a non-volatile ferroelectric memory and the like.