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发明授权
CN105870314B 一种柔性硅基纳米薄膜热电器件 有权 许可

一种柔性硅基纳米薄膜热电器件
摘要：
本发明提出了种柔性硅基纳米薄膜热电器件,包括柔性玻璃基底,在所述柔性玻璃基底上设置有硅基纳米薄膜热电臂、石墨烯电极、石墨烯涂层,所述硅基纳米薄膜热电臂采用物理气相沉积技术沉积在所述柔性玻璃基底上,所述硅基纳米薄膜热电臂之间采用石墨烯电极进行连接。本发明采用柔性玻璃基底,沉积在基底表面的纳米硅基薄膜在制备过程中可以采用高温快速退火工艺,有利于量子点和超晶格的生成,大幅提高硅基纳米薄膜热电性能。
摘要（英）：

The invention proposes a flexible silicon-based nanometer thin film thermoelectric device. The flexible silicon-based nanometer thin film thermoelectric device comprises a flexible glass substrate, wherein silicon-based nanometer thin film thermoelectric arms, graphene electrodes and a graphene coating layer are arranged on the flexible glass substrate, the silicon-based nanometer thin film thermoelectric arms are deposited on the flexible glass substrate by a physical vapor deposition technology, and the silicon-based nanometer thin film thermoelectric arms are connected by the graphene electrodes. In the flexible silicon-based nanometer thin film thermoelectric device, the flexible glass substrate is adopted, a high-temperature rapid annealing process can be adopted during the preparation process of a nanometer silicon-based thin film deposited on the surface of the substrate, the generation of quantum dots and superlattices are facilitated, and the thermoelectric performance of the silicon-based nanometer thin film is substantially improved.

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