The invention puts forward a semiconductor structure and a method for preparing the same. To be specific, the method comprises: (1), providing a substrate made of glass; and (2), carrying out sputtering deposition on the upper surface of the substrate to form a first nitride semiconductor layer, thereby obtaining the semiconductor structure. And the first nitride semiconductor layer has a crystal preferred orientation. Therefore, the preparation cost can be reduced and the preparation process can be simplified; and the nitride semiconductor structure having the crystal preferred orientation is obtained on the glass substrate. With the nitride semiconductor structure having the crystal preferred orientation, induction of other nitride structures formed subsequently can be realized smoothly, so that the other nitride structures also can have the crystal preferred orientations.