利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN106018879A 一种MEMS加速度传感器及制造方法 有权 转让

一种MEMS加速度传感器及制造方法
摘要：
本发明涉及传感器加工技术领域，尤其涉及基于MEMS加工工艺制成的MEMS加速度传感器，包括硅衬底、硅衬底中的第一预定空腔及第一预定空腔上方的悬空硅膜、至少一个第二预定空腔及其第二预定空腔上方的悬空硅膜、半导体掺杂电阻，半导体掺杂与导电线电连接；于第一预定空腔上方形成第一连接件、第一释放槽，于第二预定空腔上方形成限位挡板、第二释放槽、第二连接件，第一释放槽结合第二释放槽形成一悬空释放结构；其中，限位挡板一端连接硅衬底，另一端自由悬空，第一连接件、第二连接件一端与硅衬底连接，另一端和第一预定空腔上方的悬空硅膜连接，通过悬空释放结构中的限位挡板实现精确的限位过载保护目的，结构简单，且易于加工。
摘要（英）：

The invention relates to the technical field of sensor processing, and especially relates to an MEMS acceleration sensor manufactured based on an MEMS processing technology. The MEMS acceleration sensor comprises a silicon substrate, a first predetermined cavity in the silicon substrate and a dangling silicon film above the first predetermined cavity, at least one second predetermined cavity and a dangling silicon film above the at least one second predetermined cavity, and a semiconductor doped resistor electrically connected with a conductive line. A first connector and a first release groove are formed above the first predetermined cavity. A limiting baffle, a second release groove and a second connector are formed above the second predetermined cavity. The first release groove and the second release groove are combined to form a dangling release structure. One end of the limiting baffle is connected with the silicon substrate, and the other end is freely dangling. One end of the first connector and one end of the second connector are connected with the silicon substrate, and the other end of the first connector and the other end of the second connector are connected with the dangling silicon film above the first predetermined cavity. Precise limiting overload protection is achieved through the limiting baffle in the dangling release structure. The MEMS acceleration sensor has a simple structure, and is easy to process.

公开/授权文献
0/0