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发明授权
CN106062251B 多晶硅膜的形成方法 有权

多晶硅膜的形成方法
摘要：
本发明涉及形成硅膜的方法，更详细地涉及在形成硅膜的工序中包含预处理工序的多晶硅膜形成方法。根据本发明的一实施例，硅膜形成方法在对蒸镀于基底上的非晶硅膜进行热处理而制作多晶硅膜的工序中，在热处理之前包括预处理工序，该预处理工序流过包含有N、C、O、B中任一种以上元素的预处理气体。
摘要（英）：

Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

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